BOPI 08 BR/2023 REPERTOIRE NUMERIQUE 14 Consulter le mémoire ________________________________________ (11) 21086 (51) H01L 27/15 (2018.01); H01L 33/10 (2018.01); H01L 33/36 (2018.01); H01L 33/38 (2018.01); H01L 33/60 (2018.01) ; H01L 33/62 (2018.01) (21) 1202100492 - PCT/KR2019/017219 (22) 06/12/2019 (30) KR n° 10-2019-0012988 du 31/01/2019; KR n° 10-2019-0012666 du 31/01/2019 (54) ‘‘Light-Emitting Diode’’ (72) KIM, Jae Kwon (KR); HEO, Min Chan (KP); KIM, Kyoung Wan (KP); KIM, Jong Kyu (KP); KIM, Hyun A (KP) et LEE, Joon Sup (KP) (73) SEOUL VIOSYS Co., Ltd, 65-16, Sandan-ro 163 beon-gil, Danwon-gu, Ansan-si, GYEONGGIDO (KR) (74) SCP ATANGA IP, 2nd Floor Tayou Bldg Douche-Akwa, P.O. Box 4663, DOUALA (CM). (57) A Light Emitting Diode according to an exemplary embodiment includes: a first conductivity type semiconductor layer; a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer, in which the active layer generates light having a peak wavelength of about 500 nm or less, the lower insulation layer includes a distributed Bragg reflector, the lower insulation layer has a high reflection wavelength band continuously exhibiting reflectances of 90% or more in a wavelength range of the visible region, reflectances in a first wavelength region including a peak wavelength of light generated in the active layer within the high reflection wavelength band are higher than those in a second wavelength region within a range of 554 nm to 700 nm, and the first wavelength region is located in a region of wavelengths shorter than 554 nm.
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